Fabrication Facilities

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  • Alcatel Deep Reactive Ion Etcher – Anisotropic etching of Si and SiO2 width:640;;height:480
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  • KJL PVD-250 e-beam evaporator – 7cc 4-pocket e-beam evaporator with substrate heating, rotational substrate holder and Kauffman Ion gun for assisted evaporations. width:640;;height:480
  • Trion PECVD – oxide/nitride deposition, with low stress, fast deposition rates, System is load locked using a triode plasma source and heated substrate holder. width:640;;height:480
  • Trion RIE – 3/5 etcher using ICP, static cooled chuck with biasing.  System is load locked using inductively coupled plasma with the capability to flow 8 process gases. width:640;;height:480
  • Solid Source Doping Furnaces (p/n) – SS Doping furnaces set up to separately to run Phosphorus and Boron sources. width:640;;height:480
  • Thermal Oxidation Furnace – 4” wet/dry oxidation furnace 1100C maximum temperature width:640;;height:480
  • Filmetric - interferometer thickness measurement system width:640;;height:480
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  • Samco Reactive Ion Etcher – Table top etcher configured with CF4 and O2 for oxide and nitride etching. width:640;;height:480
  • Dektak profilometer – contact measurement system width:640;;height:480
  • Cambridge Atomic Layer Deposition – 3 source metal organic precursor for the growth of Nan scale oxide films. width:640;;height:480
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  • Karl Suss MA-6 – Contact mask aligner capable of 0.5um features on 2” – 150mm substrates with back side alignment.  The system is also retrofitted with BA-6 hardware for wafer to wafer alignment.  365nm and 405nm exposure wavelengths. width:640;;height:480
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